Semiconductor Epoxy Mold Compounds

Semiconductor grade epoxy molding compounds with high electrical stability

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Industrial Epoxy Mold Compounds Semiconductor Epoxy Mold Compounds Optoelectronic Epoxy Mold Compounds

Semiconductor Epoxy Molding Compounds
Product Name	Key Properties
	Color	Filler Content (%)	Specific Gravity	Glass Transition Temperature (Tg), °C	CTE, Alpha 1 ppm/°C	CTE, Alpha 2 ppm/°C	Gel Time (s)	Ionic Content Na+/Cl- ppm	Spiral Flow (cm)	Thermal Conductivity (W/mK)	Packages
	LINQSOL EMC-6043	Black	85	1.97	140	11	42	34	7 / 9	140	-	SOT
	LINQSOL EMC-7142	Black	89	2.00	122	8	34	30	15 / 15	90	-	SOP QFP
	LINQSOL EMC-7535	Black	75	1.96	176	13	37	24	15 / 15	86	-	TO
	LINQSOL EMC-7535MF	Black	-	1.96	215	9	35	29	<15 / <10	85	-	-
	LINQSOL EMC-7560	Black	85	1.95	205	10	52	30	10 / 10	82	0.9	SiC MOSFET
	LINQSOL EMC-9070	Black	89	2.01	126	8	30	35	6.7 / 4.1	127	-	QFN, DFN
	LINQSOL EMC-9012	Black	89	2.01	133	8	35	45	7/6	165	-	QFN, DFN, BGA
	GR15F-MOD2C	Black	81.5	1.93	236	15	42	31	5 / 5	109	0.78	SiC MOSFET
	GR 2220	Black	75	1.82	161	18.5	63.3	18	3.6 / 10.4	81.28	-	MnO2 Caps
GR 2310	Gold	72	1.82	175	20	73	12	9 / 13	72	0.64	MnO2 Caps
GR 2310V	Gold	72	1.85	180	18	70	28	9 / 19	114	0.7	MnO2 Caps
GR 2320	Black	71	1.8	170	20	75	14	4 / 10	76.2	0.7	MnO2 Caps
GR 2330	Orange	74	1.83	175	19	67	14	3 / 8	81	0.65	MnO2 Caps
GR 2710	Gold	81.7	1.93	161	13	51	15	5 / 8	105	-	AO Caps
GR 2710FF	Gold	84	1.96	160	11	47	13	6 / 7	116	0.8	AO Caps
GR 2720	Black	79	1.87	160	18	58	19	2 / 5	96.5	0.7	AO Caps
GR 2811	Gold	85	1.96	162	13	45	15	1 / 7	86.3	2.7	POSCAP
GR 2812	Gold	90	2	105	7	29	20	2.7 / 7.7	73	-	POSCAP
GR 2820	Black	83	1.9	183	12	45	20	6.6 / 7	66	-	POSCAP
GR2821	Black	85	1.96	116	13	45	31	1 / 7	101	2.7	POSCAP
GR 2822	Black	88	1.98	105	7	36	-	2.9 / 8	99	-	POSCAP
GR 30	Black	81	1.9	183	13	57	17	-	62	0.95	T0220/247
GR 300	Black	80	1.94	185	12	51	19	4.5 / 9.3	34	0.95	T0220/93/252
GR 30HT	Black	72	2.1	186	21	56	21	20 / 20	88	1.9	T0/93
GR 350HT	Black	79	2.13	182	20	62	28	15 / 8	61	1.6	T0/220F
GR 360A-ST	Black	77	1.84	168	15	59	23	-	98	-	Diodes,TO,DIP
GR 510	Black	88	1.99	113	8	27	36	5 / 10	111	-	QFP, SOT
GR 510-HP	Black	88	1.99	116	7.5	30.5	31	4 / 6.1	101.6	-	Resistors
GR 600-P1	Black	88	2	119	7.1	31	27	4.9 / 5.9	34	-	DPAK/D2PAK
GR 600 SL2	Black	87	2.03	165	7	42	27	-	83	-	TO252
GR 640HV	Black	74	1.83	160	16	60	26	5 / 10	75	0.85	SOT,SOD,SMX
GR 640HV-L1	Black	75	1.85	165	16	58	28	6 / 21	71	-	TO, SMX, SOT
GR 700 C3D	Black	87	1.97	118	8	27	27	3 / 9	107	0.9	TO,SOIC,PQFN
GR 700 C4C	Black	89	2	120	7	36	30	3 / 7	114	0.9	SOP,DPAK,QFP
GR 700-P2	Black	-	-	115	7	29	24	>15	89	-	TO247, TO252
GR 710F	Black	88	1.98	115	9	37	31	9 / 4	93	0.86	T0, SOIC16, TSOP, SSOP
GR 750	Black	-	-	235	10	40	26	>15	106	-	SiC MOSFETS
GR 750 X1	Black	-	-	207	8	42	24	>15	92	-	SiC MOSFETS
GR 750 X2	Black	84	1.94	182	9	32	27	5 / 15	114	0.8	ZIP,TDA2002
GR 825-73B	Black	80	1.9	135	12	45	22	-	100	0.8	SOIC, SSOP
GR 900 Q1G2	Black	89	-	112	6	33	25	3 / 13	137	-	QFN, DFN
GR 900 Q1L4	Black	89	2.02	124	7	24	36	3 / 8	124	0.9	QFN, DFN
GR 900C Q1L4E	Black	86.5	1.98	120	11	37	38	3 / 8	132	-	QFN, DFN
GR 910-C	Black	88	2.01	130	9	23	47	4 / 7	203	0.9	QFN,BGA,LGA
GR 910-C4	Black	88	2	130	8	28	44	-	170	1	QFN,BGA,LGA
GR 920	Black	88.5	2	120	9	35	40	-	102	0.9	BGA, Sensors
GR 9810-1P	Black	85	1.95	170	11	50	32	-	150	0.9	Sensors
GR 9810-1PF	Black	86	1.95	170	11	40	40	-	170	0.9	POP, SCSP
KL G200S	Black	77	1.95	175	20	78	20	3 / 8	80	1.4	DO214
KL 1000-3A	Black	75	2	165	25	77	23	3 / 7	80	1.3	ZIP,SIL,DIP
MG 15F-0140	Black	-	1.81	195	21	70	17	3 / 5	50.8	0.66	Rectifiers
MG 15F-35A	Black	-	1.82	190	21	70	20	20 / 20	64	0.7	Rectifiers
MG 21F-02	Black	71	1.81	179	21	62	22	4 / 6	65	0.7	Diodes
MG 27F-0521LF	Gold	-	1.91	167	21	67	25	4 / 3	63	0.65	MLCC Caps
MG 33F-0520	Gold	-	1.87	170	20	70	14	-	64	-	Ta Caps
MG 33F-0659	Black	76	1.83	175	18	60	14	-	66	-	Ta Caps
MG 33F-0660	Gold	76	1.83	175	18	60	14	-	66	-	Ta Caps
MG 33F-0661	Gold	72	1.81	164	18	60	22	-	69	0.8	Ta Caps
MG 36F-25A	Black	-	1.82	170	19	65	30	-	76	-	Discrete, DIP
MG 40FS	Black	-	1.84	160	20	75	25	5 / 5	89	0.95	PDIP, SOIC
MG 40FS-AM	Black	-	1.84	160	20	75	25	5 / 5	71	0.95	PDIP, SOIC
MG 52F	Black	79	1.84	155	14	60	24	2 / 2	76	0.95	TSSOP, SOIC
MG 52F-99BNXP	Black	79	1.88	155	14	56	21	2 / 2	78	0.95	TSSOP
MG 57F-0660	Gold	-	1.82	168	21	70	14	20 / 20	-	-	MnO2 Ta Caps

Legacy Semiconductor Epoxy Molding Compounds
Product Name	Key Properties
Product Name	Color	Specific Gravity	Glass Transition Temperature (Tg), °C	CTE, Alpha 1 ppm/°C	CTE, Alpha 2 ppm/°C	Moisture absorption	Ionic Content Na+/K+/Cl- ppm	Spiral Flow	Thermal Conductivity (W/mK)	Dielectric Constant
MG15F-35A	Black	1.82	191	21	63	0.64%	4/1/7	28"	0.7	3.5
MG21F-02	Black	1.81	179	21	62	0.61%	4/1/6	26"	0.7	3.6
MG33F-0520	Gold	1.87	170	20	70	-	1.5/-/2	25"	-	4.3
MG33F-0661	Gold	1.81	164	18	60	0.42%	-	27"	0.8	4.1
MG57-0660	Gold	1.82	168	21	70	0.42%	-	30"	-	4.2
MG33F-0602	Black	1.80	162	22	65	-	2/-/7	43"	-	3.9

What exactly is an HTRB test?

A "High Temperature Reverse Bias" test is a common reliability test that exposes the power devices (and hence the EMC) to the "worst case scenario" under which it must perform and not fail. During the HTRB test, the power semiconductor devices are stressed at the maximum rated reverse breakdown voltage at a temperature close to their maximum rated junction temperature (Tj max) over a defined period of time. As such, a HTRB cannot be completely understood until the variables of voltage, temperature and time are defined.

What is the ionic content in epoxy mold compound that causes semiconductor device failure?

There are four main elements that should be minimized in epoxy molding compounds. There are Chlorine (Cl-), Sodium (Na+), Fluorine (F-) and Potassium (K+), where chlorine and sodium are the most important. All the ionic content shoudl be kept under 20ppm for each individual element and less than 5ppm is desired for Chlorine and Sodium.

What is Reverse Bias?

Basically, semiconductors allow current to flow in one direction: from the p-type (positive) to the n-type (negative). Reverse bias is applying direct current (DC) voltage to prevent current flow in a diode, transistor or similar. Wikipedia has a good desription in Reverse Bias

What is the relationship between Permittivity and Dielectric Constant?

The dielectric constant is unitless because it is actually the ratio of two permittivity values: the permittivity of the substance to the permittivity of the free space. Since the lowest possible permittivity is obtained in a vacuum, the permittivity of the substance is always higher and therefore the dielectric constant is always higher than 1.

What is Ionic Mobility?

Otherwise known as Electrical Mobility, it is the ability of charged electrons or protons to move through a substance (in this case epoxy mold compound) in response to an electric field that pulls them.

How can I decap ICs?

We could suggest the obvious mechanical methods but if you came here you probably want to preserve the integrity of the bond wires and the die. That\'s why, typically, customers use a Nitric or Sulfuric acid to etch away the epoxy. Though you should definitely take the necessary precautions with a hume hood, no inhalation, customers have used this successfully without damaging the wires. Here are almost 8 million words (30 fps, we did the math)

Epoxy Molding Compounds

Epoxy Molding Compounds (EMC) by their nature have very good electrical insulation properties. Epoxy Mold Compounds are often called "functional epoxies" or "high solid epoxies" because they are heavily loaded with fillers. These fillers, (typically silica, though other fillers are used for other properties such as thermal conductivity) are loaded more than 50% by weight be default. Highly filled systems have weight % filler loadings higher than 70% with "very highly filled loadings" as high as 92% filled by weight.

These highly-filled systems provide epoxy molding compounds with very good dielectric strength and a very high breakdown voltage, which themselves are good electrical insulation properties. These two values however are poor indicators of what is meant by "Good electrical stability" for EMCs

Low permittivity means high electrical stability for epoxy mold compounds — Figure 1: Low Permittivity means high electrical stability

Graph of ionic conductivity at different frequencies to show electrical stability of epoxy mold compound — Figure 2: Ionic conductivity at different frequencies

What do we mean by good electrical stability?

Good electrical stability means that there is very little ionic movement within the epoxy mold compounds when semiconductor devices are under reverse bias at elevated temperatures. The High Temperature Reverse Bias (HTRB) reliability test is an excellent industry-developed and accepted test that tests the electrical stability of EMCs

Epoxy mold compound that are considered to have excellent electrically stability are thus those that:

Have low ionic conductivity
Have a low and stable permittivity at temperatures up to 200°C
Have a high dielectric strength
Have a stable dielectric constant over a frequency range from 1 kHz up to 1.8 GHz

What causes poor electrical stability in mold compounds?

There are two main causes of poor electrical stability in EMCs:

The ingredients used have high ionic content
The epoxy resin and hardner combination has high ionic conductivity

EMC subcomponents have high ionic content

Epoxy molding compounds are made up of many components including epoxy resins, curing agents, catalysts, fillers, pigments and additives. Each of these ingredients can contain ions in the form of chlorine (Cl-), Sodium (Na+), Fluorine (F-) and Potassium (K+). There are elements other than these that have ions, but these are the ions most frequently present and in the highest quantities - therefore are of the greatest interest. As you can see next to the elements listed, Chlorine and Fluorine both have negative (-) ions and Sodium and Potassium both have postitive (+) ions.

Of these four elements, the biggest culprits are Chlorine (Cl-) and Sodium (Na+). If the total ionic content is too high, or the ionic content of each of the Chlorine or Sodium is too high, then the risk of gate current leakage and device malfunction increases. In all semiconductor applications, it is prudent to have the total extractable ionic content to be less than 80ppm and the extractable content of each element to be below 20ppm. In high power semiconductor applications which operate at higher voltages and higher temperatures, it is better to have the total ionics to be below 20ppm, and of each element to be below 5ppm. As application temperature and power increase, the lower the ionic content the better.

Epoxy resin/hardner combination has high ionic conductivity

When exposed to the electric field caused by the DC voltage applied, these ions have a tendency to move. If they move too much, a gate current leakage occurs and gradually increases which ultimately leads to the device malfunction.

Different combinations of epoxy resin and hardener, will provide different ionic conductivities of the base epoxy. Specifically, as illustrated in Figure 1 below, a standard epoxy cresol novolac resin with a standard phenolic resin might have a low permittivity at lower temperatures, but quickly elevate at higher temperatures leading to gate current leakage failures for power semiconductor devices.

Why is electrical stability important for EMC?

The roadmap for medium and high voltage power semiconductors manufacturers is to move from Silcion (Si) die to Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductors. SiC offers the possibility of operating at higher voltages compared to Silcion, whereas GaN offres the possibility of medium power with a much higher switching frtequency compared to Silicon.

As such, even silicon can applications have applications up to 600V which requires good electrical stability for epoxy mlding compounds. As these applications switch to SiC which can run up to 3300V, the need for improved electrical stability will only be greater.

Stable dielectric constant of epoxy mold compound — Figure 3: Stable dielectric constant up to 1.8GHz

Formulating electrically stable Molding Compounds

Epoxy mold compound formulators can develop materials that will pass the HTRB test by developing EMCs that:

Have low ionic content, low ionic content and low ionic mobility
Use ion trappers
Have low permittivity
Use epoxy resin & hardener combinations that have the lowest ionic content and mobility

Selecting Semiconductor Mold Compounds

When looking for epoxy molding compounds that are very electrically stable, look for the following characteristics:

Look for epoxies with a low permittivity over a wide temperature range as in Figure 1.
Look for epoxies with a low ionic conductivity over a wide frequency range and at elevated temperatures as in Figure 2
Look for epoxies with a stable dielectric constant up to 1.8 GHz as in Figure 3.

Choosing between granular and powder molding compound

Factor	Granular Molding Compound	Powder Molding Compound
Uniformity	High: Consistent particle size distribution ensures uniform package thickness and reduces equipment contamination.	Low: Irregular particle sizes can lead to variations in package thickness and potential equipment contamination.
Thermal Stability	Better: Offers improved thermal stability, crucial for LED performance and longevity.	Lower: Might not provide the same level of thermal stability, affecting LED performance.
Cost	Higher: More complex production process due to precise particle-size control and de-foaming technology.	Lower: Less expensive to produce as it does not require the same level of particle-size control.
Processing Time	Longer: Uniformity and additional properties might require longer processing times.	Shorter: Simpler production process can lead to shorter processing times.
Agglomeration	Lower: Larger particle size reduces the risk of particle agglomeration	Higher: With smaller particle sizes, there is a higher risk of particle agglom,eration.